1 features ? rectangular led rf performance ? 450 & 460 nm C 27 mw min. C 470 nm C 24 mw min. C 527 nm C 9 mw min. ? epoxy die attach ? low forward voltage - 3.1 v typical at 20 ma ? 1000-v esd threshold rating ? ingan junction on thermally conductive sic substrate applications ? small lcd backlighting C 0.8 mm, 0.6 mm & 0.4 mm sideview packages ? mobile appliances ? digital cameras ? car navigation systems ? medium lcd backlighting C 0.8 mm, 0.6 mm & 0.4 mm sideview packages ? portable pcs ? monitors ? led video displays ? entertainment systems cree ? tr2432? leds data sheet c xxx tr2432-s xx 00 crees tr? leds are the newest generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary device technology and silicon carbide substrates to deliver superior value for the lcd sideview market. the tr leds are among the brightest in the sideview market while delivering a low forward voltage resulting in a very bright and highly effcient solution for the 0.4-mm, 0.6-mm and 0.8-mm sideview market. the design is optimally suited for industry standard sideview packages as it is die attachable with clear epoxy and has two top contacts, consistent with industry standard packaging. c xxx tr2432-s xx 00 chip diagram top view bottom view die cross section gold bond pad cathode (-) 90 x 90 m tr2432 led 240 x 320 m backside t = 115 m bottom surface 140 x 220 m gold bond pad anode (+) 90 m diameter d a t a s h e e t : c p r 3 d q r e v b subject to change without notice. www.cree.com
2 maximum ratings at t a = 25c notes 1&3 c xxx tr2432-s xx 00 dc forward current 30 ma peak forward current (1/10 duty cycle @ 1 khz) 100 ma led junction temperature 125c reverse voltage 5 v operating temperature range -40c to +100c led chip storage temperature range -40c to +120c die sheet storage conditions 30c / 85% rh electrostatic discharge threshold (hbm) note 2 1000 v electrostatic discharge classifcation (mil-std-883e) note 2 class 2 typical electrical/optical characteristics at t a = 25c, if = 20 ma note 3 part number forward voltage (v f , v) reverse current [i(vr=5v), a] full width half max ( d , nm) min. typ. max. max. typ. c450tr2432-s xx 00 2.7 3.1 3.4 2 20 c460tr2432-s xx 00 2.7 3.1 3.4 2 21 c470tr2432-s xx 00 2.7 3.1 3.4 2 21 c527tr2432-s xx 00 2.9 3.2 3.6 2 35 mechanical specifcations c xxx tr2432-s xx 00 description dimension tolerance p-n junction area (m) 200 x 280 35 chip area (m) 240 x 320 35 chip thickness (m) 115 15 au bond pad diameter anode (m) 90 -5, +15 au bond pad thicknesses (m) 1.0 0.5 au bond pad area cathode (m) 90 x 90 -5, +15 bottom area (m) 140 x 220 35 notes: 1. maximum ratings are package dependent. the above ratings were determined using a t-1 3/4 package (with hysol os4000 epoxy encapsulation and clear epoxy die attach) for characterization. ratings for other packages may differ. the forward currents (dc and peak) are not limited by the die but by the effect of the led junction temperature on the package. the junction temperature limit of 125c is a limit of the t-1 3/4 package; junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). 2. product resistance to electrostatic discharge (esd) according to the hbm is measured by simulating esd using a rapid avalanche energy test (raet). the raet procedures are designed to approximate the maximum esd ratings shown. 3. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 20 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. all measurements were made using lamps in t-1 3/4 packages (with hysol os4000 epoxy encapsulant and clear epoxy die attach). optical characteristics measured in an integrating sphere using illuminance e. copyright ? 2008-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2432 are trademarks of cree, inc. cpr3dq rev b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
3 standard bins for c xxx tr2432-s xx 00 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx tr2432-s xxxx ) orders may be flled with any or all bins (c xxx tr2432- xxxx ) contained in the kit. all radiant fux and dominant wavelength values shown and specifed are at if = 20 ma. tr 450 nm kits tr 460 nm kits c450tr2432-s2400 c450tr2432-0317 c450tr2432-0318 c450tr2432-0319 c450tr2432-0320 c450tr2432-0313 c450tr2432-0314 c450tr2432-0315 c450tr2432-0316 c450tr2432-0309 c450tr2432-0310 c450tr2432-0311 c450tr2432-0312 c450tr2432-0305 c450tr2432-0306 c450tr2432-0307 c450tr2432-0308 dominant wavelength (nm) 447.5 450 452.5 445 455 35 33 30 27 radiant flux (mw) c460tr2432-s2400 c460tr2432-0317 c460tr2432-0318 c460tr2432-0319 c460tr2432-0320 c460tr2432-0313 c460tr2432-0314 c460tr2432-0315 c460tr2432-0316 c460tr2432-0309 c460tr2432-0310 c460tr2432-0311 c460tr2432-0312 c460tr2432-0305 c460tr2432-0306 c460tr2432-0307 c460tr2432-0308 dominant wavelength (nm) 457.5 460 462.5 455 465 35 33 30 27 radiant flux (mw) copyright ? 2008-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2432 are trademarks of cree, inc. cpr3dq rev b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
4 standard bins for c xxx tr2432-s xx 00 (continued) tr 470 nm kits tr 527 nm kits c470tr2432-s2100 c470tr2432-0313 c470tr2432-0314 c470tr2432-0315 c470tr2432-0316 c470tr2432-0309 c470tr2432-0310 c470tr2432-0311 c470tr2432-0312 c470tr2432-0305 c470tr2432-0306 c470tr2432-0307 c470tr2432-0308 c470tr2432-0301 c470tr2432-0302 c470tr2432-0303 c470tr2432-0304 dominant wavelength (nm) 467.5 nm 470 nm 472.5 nm 465 nm 475 nm 33 30 27 24 radiant flux (mw) c527tr2432-s0700 c527tr2432-0310 c527tr2432-0311 c527tr2432-0312 c527tr2432-0307 c527tr2432-0308 c527tr2432-0309 c527tr2432-0304 c527tr2432-0305 c527tr2432-0306 c527tr2432-0301 c527tr2432-0302 c527tr2432-0303 dominant wavelength (nm) 525 530 535 520 15 13 11 9 radiant flux (mw) copyright ? 2008-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2432 are trademarks of cree, inc. cpr3dq rev b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
5 characteristic curves these are representative measurements for the tr led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 0 20 40 60 80 100 120 320 420 520 620 relative intensity (%) wavelength (nm) relative intensity vs peak wavelength 0% 50% 100% 150% 200% 250% 300% 350% 0 10 20 30 40 50 60 70 80 90 100 relative intensity (%) if (ma) relative intensity vs. forward current 0 10 20 30 40 50 60 70 80 90 100 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 0 10 20 30 40 50 60 70 80 90 100 shift (nm) if (ma) wavelength shift vs. forward current copyright ? 2008-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2432 are trademarks of cree, inc. cpr3dq rev b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
6 radiation pattern this is a representative radiation pattern for the tr led product. actual patterns will vary slightly for each chip. 460tr238 (tr2432) radiation pattern copyright ? 2008-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and tr and tr2432 are trademarks of cree, inc. cpr3dq rev b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com
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